Exploring Advanced Dynamic Analysis Solutions for Gallium Nitride (GaN) Power Devices
Gallium Nitride (GaN) has become a critical material in the semiconductor industry, particularly for high-power and high-frequency applications like quick charging, electric vehicles, and data centers. With its ability to handle high voltages and improve energy efficiency, GaN has revolutionized power electronics. However, GaN power devices still face unique challenges, particularly in terms of measuring and understanding their dynamic characteristics under different operating conditions.
The Challenges of GAN Dynamic Analysis
While GaN offers many advantages, including higher efficiency and smaller size compared to traditional silicon-based devices, it is also more sensitive to certain effects, such as trapping. Trapping occurs when defects in the material capture charge carriers, which can influence the electrical characteristics of the device, such as Dynamic Rdson, Dynamic Vth, and Dynamic Vsd. These parameters are critical for understanding the behavior of GaN devices under real-world operating conditions.
Three Comprehensive Solutions for GaN Dynamic Analysis
To address these challenges, we offer three advanced analysis systems specifically designed for dynamic analysis of GaN power devices:
Dynamic Rdson Measurement
This solution measures the changes in Rdson (on-state resistance) as the device operates at different voltages, providing valuable insights into how trapping effects influence the resistance. This is crucial for applications requiring high efficiency, as even small changes in Rdson can significantly impact power loss.
Dynamic Vth and Vsd Measurement
We provide a total solution for measuring dynamic threshold voltage (Vth) and source-drain voltage (Vsd). These parameters give engineers a better understanding of how GaN devices behave under various switching conditions, which is essential for optimizing performance in power electronics.
Device Dynamic Reliability Analyzer
Our analyzer focuses on extracting dynamic reliability data under independent factor acceleration, enabling engineers to evaluate device longevity and stability. It can perform package-level and wafer-level measurements for high-voltage and high-power (HV+HP) GaN devices.
Load-Free Quasi-System for Low Power Consumption
One of the standout features of our dynamic analysis solutions is the load-free quasi-system, which allows for measurements with very low power consumption. Unlike conventional methods recommended by JEDEC, our approach can test more parameters simultaneously, providing a more comprehensive analysis of GaN devices. This method also offers a higher degree of freedom in parameter settings, enabling engineers to customize tests according to their specific needs.
Benefits of Our Solutions
Accelerated Testing Process
With our equipment, the time required to move from component design to system-level feedback is significantly reduced—from several years to just a few months. This accelerated timeline allows for faster development cycles and quicker iterations, which is crucial for industries like electric vehicles and renewable energy.
Multi-Device Testing
Our solutions can simultaneously test multiple devices under programmable switching conditions, making it easy to compare the performance of different components or batches. This capability is particularly useful for quality control and reliability testing.
Why GaN Trapping Effects Matter
Trapping effects in GaN materials can lead to a range of issues, from increased power loss to decreased device reliability. By accurately measuring Dynamic Rdson, Vth, and Vsd, we can better understand these effects and mitigate their impact. Our systems are designed to offer precise measurements that can capture transient changes, providing a clear picture of how GaN devices will perform in actual applications.
Our Solutions
For package: DDA8010 Device Dynamics Analyzer
On-wafer: WPDDA6505 Wafer Probing Device Dynamics Analyzer
Coworking with MPI’s probe station realizes wafer-level GaN HV + HP dynamic measurement, which can automatically or manually position the wafers, and has a built-in temperature control system to achieve more efficient wafer-level dynamic measurement at different temperatures.
For reliability: DDRA8010 Device Dynamic Reliability Analyzer
The dynamic characteristics of multiple GaN components can be tested at the same time, and the lifetime of GaN under real system operation can be evaluated by using Temperature, Voltage, Current (Esw), Frequency or Duty to accelerate GaN device aging which can ensure the stability and availability of the GaN product.