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DDRA8010 Device Dynamic Reliability Analyzer

DDRA8010 Device Dynamic Reliability Analyzer

We all know that currently there is no commercial solution for dynamic characterization of GaN.Our Dynamic characterization means to extract device parameters under switching operation (ex. 100kHz, 20% duty continuously) instead of static or multi-pulse.We will provide 1st total solution for dynamic reliability of GaN
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Device Dynamic Reliability Analyzer

   In the face of high-voltage and high-current dynamic testing requirements, we provided
GaN Device Dynamics Analyzer to solve the difficulty of dynamic analysis under programmable
switching condition. Different from the parameter analyzer on the market, our Dynamic characterization means to extract device parameters under switching operation (ex. 100kHz, 20% duty continuously) instead of static or multi-pulse.Our GaN  Device Dynamics Analyzer will provide 1st total solution for dynamic characterization of GaN which is capable to extract following parameters.

GaN量測困難-GaN動態測試解決方案

Dynamics under hard switching or soft switching
■ Switching On-Vg : -12V~12V for device benchmark
■ Switching Voltage : Up to 800V
■ Switching Frequency : Up to 300k Hz
■ Switching Duty : 10%~90%
■ Temperature : 25C~175C
■ Dynamic Rdson(HSW, ZVS), Dynamic HTOL (SALT)…

DDRA8010

Device Dynamic Reliability Analyzer - 10 DUT Module

DDRA8010-Device-Dynamic-Reliability-Analyzer

There are 3 characteristic features

在hard-switching 或 soft-switching下執行動態分析

Dynamics under hard-switching or soft-switching

 

操作電壓-12~12V

Switching On-Vg:
-12V~12Vfor device benchmark.

 

hard-switching-soft-switching

Dynamic Vth under hard-switching or soft-switching.

 

Methodology to Evaluate System Lifetime

DDRA8010-Evaluate-System-Lifetime

The specifications of our GaN Dynamic Reliability Analyzer are as follows:

◆    Switching On-Vg : -12V~12V for device benchmark
◆    Switching Voltage : Up to 800V
◆    Switching Current : <10A
◆    Switching Frequency : Up to 300kHZ
◆    Switching Duty : 10%~90%
◆    Temperature : 25C~175C
◆    Characterization Items : Dynamic Rdson(HSW, ZVS), Dynamic HTOL (SALT), Pulse I-V…