Video

How to accelerate the commercialization of high-power semiconductors such as GaN gallium nitride?

Advanced GaN Dynamic Testing Solutions for Semiconductor Reliability and Performance

Advanced Tools for Dynamic Analysis of Gallium Nitride Power Devices

As GaN technology continues to evolve, it is critical for engineers and researchers to have access to advanced tools for dynamic analysis. Our comprehensive solutions for measuring Dynamic Rdson, Vth, and Vsd enable faster development, more accurate testing, and better overall performance of GaN power devices. Whether you are working with packaged components or wafer-level measurements, our systems provide the flexibility and precision needed to stay ahead in the competitive semiconductor industry.

Three analysis systems designed for the dynamic analysis of Gallium Nitride. We offer a comprehensive solution for measuring Dynamic Rdson, Dynamic Vth, and Dynamic Vsd caused by the trapping effects in Gallium Nitride. In addition to package- and wafer-level GaN HV+HP dynamic measurements, we also provide the Device Dynamic Reliability Analyzer for evaluating dynamic reliability under independent factor acceleration. These three solutions allow for easy testing of packages, wafers, and even multiple DUTs under programmable switching conditions.