An ace in the hole for accelerating the commercialization of Gallium Nitride- Device Dynamics Analyzer, Wafer Probing Device Dynamics Analyzer
The first condition to realize the commercialization of Gallium Nitride components is to ensure the stability and availability. For this reason, we provide three sets of solutions - Packaged Device Dynamics Analyzer, Wafer Probing Device Dynamics Analyzer and Dynamic Reliability Analyzer
Ensuring the stability and availability is the first condition to accomplish the commercialization of Gallium Nitride
Dynamic Rdson, Dynamic Vth and Dynamic Vsd are three important key parameters for dynamic testing. Existing semiconductor parameter analyzers on the market provide the Rdson, Vth, and Vsd testing requirements of GaN components under static conditions, but how to know the dynamic Rdson, Vth, Vsd of GaN under actual operating conditions? After spending a lot of time designing GaN components, if you can't know the dynamic parameters under the operating state, how to ensure the effect of the system on the components? To accelerate the commercialization and mass production of GaN, it is the first necessary to ensure the stability and availability of components.
How to ensure the stability and availability of GaN devices?
In the face of this challenge, we provide 3 sets of solutions, which not only testing Dynamic Rdson, Dynamic Vth and Dynaminc Vsd in the operating state, but having its own temperature control system, which can directly use high temperature on the system to accelerate the aging, and then evaluate the lifetime of GaN on the real system.
Three analysis systems designed for dynamic analysis of Gallium Nitride
We provide total solution for measuring Dynamic Rdson, Dynamic Vth and Dynamic Vsd from trapping effect of Gallium Nitride. In addition to package, wafer-level GaN HV+HP dynamic measurement, there is also Device Dynamic Reliability Analyzer for extracting dynamics reliability under independent factor acceleration. The three solutions can easily exam packages, wafers and even multiple-DUT under programmable switching condition.
For package: DDA8010 Device Dynamics Analyzer
On-wafer: WPDDA6505 Wafer Probing Device Dynamics Analyzer
DDL coworking with MPI’s probe station realizes wafer-level GaN HV + HP dynamic measurement, which can automatically or manually position the wafers, and has a built-in temperature control system to achieve more efficient wafer-level dynamic measurement at different temperatures.
For reliability: DDRA8010 Device Dynamic Reliability Analyzer
The dynamic characteristics of multiple GaN components can be tested at the same time, and the lifetime of GaN under real system operation can be evaluated by using Temperature, Voltage, Current (Esw), Frequency or Duty to accelerate GaN device aging which can ensure the stability and availability of the GaN product.
The actual testing videos
We provide total solution for measuring Dynamic Rdson, Dynamic Vth and Dynamic Vsd from trapping effect of Gallium Nitride. In addition to package, wafer-level GaN HV+HP dynamic measurement, there is also Device Dynamic Reliability Analyzer for extracting dynamics reliability under independent factor acceleration. The three solutions can easily exam packages, wafers and even multiple-DUT under programmable switching condition. Check the actual videos!